Product Summary

The IRF7324TRPBF Power MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the IRF7324TRPBF design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.

Parametrics

IRF7324TRPBF absolute maximum ratings: (1)Drain-Source Voltage: -20 V; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -9.0 A; (3)ID @ TA = 70℃, Continuous Drain Current, VGS @ -4.5V: -7.1 A; (4)Pulsed Drain Current: -71; (5)PD @TA = 25℃, Maximum Power Dissipation: 2.0 W; (6)PD @TA = 70℃, Maximum Power Dissipation: 1.3 W; (7)Linear Derating Factor: 16 mW/℃; (8)Gate-to-Source Voltage: ± 12 V; (9)Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRF7324TRPBF features: (1)Trench Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Low Profile (<1.1mm); (5)Available in Tape & Reel; (6)2.5V Rated.

Diagrams

IRF7324TRPBF diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7324TRPBF
IRF7324TRPBF
International Rectifier
MOSFET MOSFT DUAL PCh -20V 9A
Data Sheet
0-1: $1.30
1-25: $0.80
25-100: $0.55
100-250: $0.52
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF710
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Vishay/Siliconix
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Data Sheet
0-730: $0.79
730-1000: $0.76
1000-2000: $0.74
2000-5000: $0.73
IRF710, SiHF710
IRF710, SiHF710
Other

Data Sheet
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IRF710_R4943
IRF710_R4943
Fairchild Semiconductor
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Data Sheet
Negotiable 
IRF7101
IRF7101
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-570: $0.45
IRF7101PBF
IRF7101PBF
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Data Sheet
0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR
International Rectifier
MOSFET N-CH 20V 3.5A 8-SOIC
Data Sheet
1-4000: $0.41